Maxwell-Wagner Instabilities and Defects Generation during CVS in REO-HfO 2 Gate Stacks Grown on Germanium Based MOS Devices

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Bibliographic Details
Published inMeeting abstracts (Electrochemical Society) Vol. MA2010-02; no. 22; p. 1518
Main Authors Rahman, Md. Shahinur, Evangelou, Evangelos K., Dimoulas, Athanasios
Format Journal Article
LanguageEnglish
Published 08.07.2010
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ISSN:2151-2043
2151-2035
DOI:10.1149/MA2010-02/22/1518