Some Insights into the Relaxation Mechanisms of Germanium Growing on (001) Si by Ultrahigh Vacuum Chemical Vapor Deposition
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Published in | Meeting abstracts (Electrochemical Society) Vol. MA2006-02; no. 31; p. 1461 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
30.06.2006
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Online Access | Get full text |
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Author | HALBWAX, Mathieu DEBARRE, Dominique YAM, Vy NGUYEN, Lam BOUCHIER, Daniel Fossard, Frédéric |
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Title | Some Insights into the Relaxation Mechanisms of Germanium Growing on (001) Si by Ultrahigh Vacuum Chemical Vapor Deposition |
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