Some Insights into the Relaxation Mechanisms of Germanium Growing on (001) Si by Ultrahigh Vacuum Chemical Vapor Deposition

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Bibliographic Details
Published inMeeting abstracts (Electrochemical Society) Vol. MA2006-02; no. 31; p. 1461
Main Authors BOUCHIER, Daniel, YAM, Vy, HALBWAX, Mathieu, NGUYEN, Lam, DEBARRE, Dominique, Fossard, Frédéric
Format Journal Article
LanguageEnglish
Published 30.06.2006
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ISSN:2151-2043
2151-2035
DOI:10.1149/MA2006-02/31/1461