Desorption of Ge Species during Thermal Oxidation of Ge and Annealing of HfO 2 /GeO 2 Stacks

Thermal stability of HfO 2 /GeO 2 stacks was investigated. These structures were stable on Si up to 600 o C following annealing in N 2 . Samples prepared on Ge yielded direct evidence of migration and loss of both Ge and O. This contrasting behavior is a result of GeO formation at the GeO 2 /Ge inte...

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Published inECS transactions Vol. 45; no. 4; pp. 137 - 144
Main Authors Radtke, Cláudio, Rolim, Guilherme K., Da Silva, Samoel R.M., Soares, Gabriel V., Krug, Cristiano, Baumvol, Israel J.R.
Format Journal Article
LanguageEnglish
Published 27.04.2012
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Summary:Thermal stability of HfO 2 /GeO 2 stacks was investigated. These structures were stable on Si up to 600 o C following annealing in N 2 . Samples prepared on Ge yielded direct evidence of migration and loss of both Ge and O. This contrasting behavior is a result of GeO formation at the GeO 2 /Ge interface. Desorption of Ge was also observed during thermal oxidation of this semiconductor. The amounts of desorbed Ge were related to the oxygen pressure. Oxygen isotopic tracing results evidenced a strong interaction of oxygen from the gas phase with the already formed GeO 2 layer.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3700462