Reactive Ion Etch of Si3N4 Spacers High Selective to Germanium

The plasma etching of Si3N4 spacers selective to germanium with less than one nanometer recess in a CH3F/CF4/O2 mixture has been studied. The X-Ray Photoelectron Spectroscopy, Angle Resolved X-ray Photoelectron Spectroscopy, Transmission Electron Microscopy, Ellipsometry and Mass Metrology analyses...

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Bibliographic Details
Published inECS transactions Vol. 16; no. 10; pp. 147 - 152
Main Authors Altamirano, Efrain, Kunnen, Eddy, De Jaeger, Brice, Boullart, Werner
Format Journal Article
LanguageEnglish
Published 03.10.2008
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Summary:The plasma etching of Si3N4 spacers selective to germanium with less than one nanometer recess in a CH3F/CF4/O2 mixture has been studied. The X-Ray Photoelectron Spectroscopy, Angle Resolved X-ray Photoelectron Spectroscopy, Transmission Electron Microscopy, Ellipsometry and Mass Metrology analyses suggest that the oxidation of the germanium top layers is the key parameter to achieve a high selectivity during the Si3N4 spacer patterning.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2986761