Growth of InN by Plasma-Assisted Molecular Beam Epitaxy on InN/GaN and p-GaN Templates

InN is grown by plasma-assisted molecular beam epitaxy on templates prepared by hydride vapor phase epitaxy. These uniques templates consist of InN/GaN and p-GaN epilayers. Homoepitaxy creates challenges for surface preparation prior to growth. Quality InN layers as seen by x-ray diffraction and pho...

Full description

Saved in:
Bibliographic Details
Published inECS transactions Vol. 11; no. 5; pp. 103 - 109
Main Authors Readinger, Eric D., Chern, Grace, Reed, Meredith, Shen, P., Wraback, Michael, Syrkin, Alexander, Usikov, Alexander, Kovalenkov, Oleg, Ivantsov, Vladimir, Dmitriev, Vladimir
Format Journal Article
LanguageEnglish
Published 28.09.2007
Online AccessGet full text

Cover

More Information
Summary:InN is grown by plasma-assisted molecular beam epitaxy on templates prepared by hydride vapor phase epitaxy. These uniques templates consist of InN/GaN and p-GaN epilayers. Homoepitaxy creates challenges for surface preparation prior to growth. Quality InN layers as seen by x-ray diffraction and photoluminescence data are developed when growing on HVPE InN/GaN templates. InN growth on p-GaN provides a novel solution for p-down diodes utilizing InN. The in situ surface preparation of these templates is a challenge preventing undesirable band bending at the hetero-interface. Two in situ surface preparations are attempted with no significant impact on the quality of the InN layer.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2783863