Strain Degradation in Strained-Si Layers Far Thicker than the Critical Thickness Grown on Relaxed Si 0.65 Ge 0.35 Layers

We have investigated for the first time the thickness effect of strained-Si layers grown on relaxed Si 0.65 Ge 0.35 layers for power MOSFET applications. It was found that 98% of the strain compared to theoretical value was still maintained up to 100nm but the value was decreased to 70% at 150nm and...

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Published inECS transactions Vol. 3; no. 7; pp. 411 - 420
Main Authors Kang, Suk June, Yuk, Hyung-Sang, Kim, In-Kyum, Lee, Jea-Chun, Lee, Sang-Hyun, Shim, Jung-Jin, Lee, Bo-Young, Fiorenza, J. G., Curtin, M., Lochtefeld, Anthony
Format Journal Article
LanguageEnglish
Published 20.10.2006
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Summary:We have investigated for the first time the thickness effect of strained-Si layers grown on relaxed Si 0.65 Ge 0.35 layers for power MOSFET applications. It was found that 98% of the strain compared to theoretical value was still maintained up to 100nm but the value was decreased to 70% at 150nm and 44% at 300nm. We have also presented the mechanism of dislocation generation caused by an increase in the strained-Si layer thickness and how it degrades the strain, surface roughness, and wafer curvature.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2355838