Electromigration in sub-micron Copper Interconnects in Low-k Dielectrics

In the advanced on-chip interconnect Technology, the interconnect reliability has been a subject of utmost importance. As the line width is reduced to the sub -micron range, the current carrying capability of the Cu interconnect lines becomes an important issue. This paper discusses the electromigra...

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Bibliographic Details
Published inECS transactions Vol. 1; no. 11; pp. 77 - 91
Main Authors Agarwala, Birendra, Chanda, Kaushik, Rathore, H. S., Nguyen, Du, Hu, Chao-Kun, Mclaughlin, Paul, Demarest, James, Clevenger, Lawrence, Yang, Chih-Chao
Format Journal Article
LanguageEnglish
Published 07.07.2006
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Summary:In the advanced on-chip interconnect Technology, the interconnect reliability has been a subject of utmost importance. As the line width is reduced to the sub -micron range, the current carrying capability of the Cu interconnect lines becomes an important issue. This paper discusses the electromigration behavior of Cu interconnects passivated with low-k dielectrics. The influences of the cap dielectrics, the liner thickness, via /liner contact and multiple via on the EM lifetime are discussed. The data on the EM kinetics are also presented.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2218480