The Effect of Defects on Time Dependent Dielectric Breakdown Acceleration in TiN/ZrO 2 /Al 2 O 3 /p-Ge Gate Stacks

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Bibliographic Details
Published inECS transactions Vol. 77; no. 5; pp. 43 - 50
Main Authors Ding, Yiming, Misra, Durgamadhab, Tapily, Kandabara, Clark, Robert D., Consiglio, Steven, Wajda, Cory S., Leusink, Gert J.
Format Journal Article
LanguageEnglish
Published 26.04.2017
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ISSN:1938-6737
1938-5862
DOI:10.1149/07705.0043ecst