Nonvolatile Memory Device Using Mobile Protons via Insertion Hydrogen Neutral Beam Treatment Process between SiO 2 Deposition Processes at Room Temperature

We demonstrated the nonvolatile memory functionality of nano-crystalline silicon (nc-Si) thin film transistors (TFTs) using mobile protons that are generated by very short time hydrogen neutral beam (H-NB) treatment at room temperature (25 °C). The whole memory fabrication process kept under 50 °C (...

Full description

Saved in:
Bibliographic Details
Published inECS transactions Vol. 64; no. 10; pp. 181 - 186
Main Authors Jang, Jin Nyoung, Lee, Dong hyeok, Jeon, Sanghun, Park, Jeunghak, Hong, MunPyo
Format Journal Article
LanguageEnglish
Published 05.08.2014
Online AccessGet full text

Cover

More Information
Summary:We demonstrated the nonvolatile memory functionality of nano-crystalline silicon (nc-Si) thin film transistors (TFTs) using mobile protons that are generated by very short time hydrogen neutral beam (H-NB) treatment at room temperature (25 °C). The whole memory fabrication process kept under 50 °C (except SiO 2 deposition process; 300 °C). These nc-Si devices exhibited reproducible hysteresis, reversible switching, and nonvolatile memory behaviors in comparison with those of the conventional FET devices. Our study will further provide a useful route of creating memory functionality and incorporating proton-based storage elements onto a probability of next generation flexible memorable electronics such as low power consumption flexible display panel.
ISSN:1938-5862
1938-6737
DOI:10.1149/06410.0181ecst