Mn 2 O 3 Slurry Achieving Reduction of Slurry Waste

Fumed silica is widely used for SiO 2 chemical mechanical polishing (CMP). In semiconductor processes, only fresh slurry is used, the used slurry being disposed of. We have demonstrated that Mn 2 O 3 abrasive slurry polishes dielectric SiO 2 film, giving 4 times the removal rate of conventional fume...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 51; no. 4R; p. 46506
Main Authors Kishii, Sadahiro, Nakamura, Ko, Hanawa, Kenzo, Watanabe, Satoru, Arimoto, Yoshihiro, Kurokawa, Syuhei, Doi, Toshiro K.
Format Journal Article
LanguageEnglish
Published 01.04.2012
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Summary:Fumed silica is widely used for SiO 2 chemical mechanical polishing (CMP). In semiconductor processes, only fresh slurry is used, the used slurry being disposed of. We have demonstrated that Mn 2 O 3 abrasive slurry polishes dielectric SiO 2 film, giving 4 times the removal rate of conventional fumed silica slurry. The higher removal rate reduces the total amount of slurry used, consequently reducing the amount of used slurry waste. The removal rate of Mn 2 O 3 slurry remains constant for solid concentrations between l and 10 wt %, and stays constant without pad conditioning. These characteristics are very useful for slurry reuse. Remanufacture of Mn 2 O 3 slurry from used slurry has been demonstrated, and the removal rates of the remanufactured and fresh slurries are the same. Reuse and remanufacturing drastically reduce the amount of waste.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.51.046506