High Speed, Low Power Programming in 0.17µm Channel Length NOR-type Floating Gate Flash Memory Cell Free of Drain Turn-On Effects

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 43; no. No. 2A; pp. L224 - L226
Main Authors Baek, Chang-Ki, Song, Yunheub, Kim, Bomsoo, Quan, Wu-yun, Park, Young June, Min, Hong Shick, Kim, Dae M.
Format Journal Article
LanguageEnglish
Published 01.02.2004
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ISSN:0021-4922
DOI:10.1143/JJAP.43.L224