High-Fluidity Deposition of Silicon by Plasma-Enhanced Chemical Vapor Deposition Using Si 2 H 6 or SiH 4

High-fluidity deposition of silicon thin films on fine-patterned surfaces has been achieved at a substrate temperature of -110°C from a Si 2 H 6 plasma or a high-partial-pressure SiH 4 discharge by using a conventional diode-type reactor. It is shown that the polymerization reaction forming higher s...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 32; no. 6S; p. 3081
Main Authors Shin, Hidetoshi, Hashimoto, Makoto, Okamoto, Katsuhiko, Seiichi Miyazaki, Seiichi Miyazaki, Masataka Hirose, Masataka Hirose
Format Journal Article
LanguageEnglish
Published 01.06.1993
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Summary:High-fluidity deposition of silicon thin films on fine-patterned surfaces has been achieved at a substrate temperature of -110°C from a Si 2 H 6 plasma or a high-partial-pressure SiH 4 discharge by using a conventional diode-type reactor. It is shown that the polymerization reaction forming higher silane radicals proceeds on the surface which suffers ion irradiation. The formation rate of the polymerized species competes with its decomposition rate induced by ion bombardment. The former is predominant when Si 2 H 6 or high-partial-pressure SiH 4 is used. Such polymerised precursors exhibit high fluidity which is favorable for planarizing the patterned surface.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.32.3081