Cr 3+ ‐doped far‐red phosphors with zero thermal quenching and excellent spectral matching for plant lighting application

• Published in: Journal of the American Ceramic Society Vol. 107; no. 9; pp. 6070 - 6079
• Main Authors: Duan, Daochuan, Yu, Shijie, Wu, Yubo, Dong, Yan, Shao, Qiyue, Jiang, Jianqing
• Format: Journal Article
• Language: English
• Published: 01.09.2024
• ISSN: 0002-7820; 1551-2916
• DOI: 10.1111/jace.19855

Abstract Far‐red‐emitting (700−740 nm) phosphors are essential for the fabrication of plant lighting phosphor‐converted light‐emitting diodes (pc‐LEDs). However, the development of highly efficient, thermally stable, and spectrally matched far‐red phosphors still remains a challenge. Herein, far‐red GdAlO 3 :Cr 3+ (GAO:Cr 3+ ) phosphors were synthesized via solid‐state reaction and investigated for plant lighting pc‐LED applications. A low‐temperature flux‐assisted synthesis strategy was adopted to improve the crystalline quality, suppress the defect formation, and maintain the valence state of Cr 3+ in the phosphors, finally leading to significant luminescent enhancement (∼10 times). The GAO:Cr 3+ phosphors show the 2 E sharp‐line emissions around 730 nm, which is highly matched with the far‐red absorption band of plants. The optimized GAO:0.01Cr 3+ phosphor exhibits a high internal quantum efficiency of 98.3% and zero thermal quenching even up to 250°C. The fabricated pc‐LED can generate an overall output power of 78.1 mW at 100 mA drive current, with a high energy conversion efficiency of 25.3%. The findings demonstrate the great potential of GAO:Cr 3+ as far‐red‐emitting phosphor materials for plant growth pc‐LED applications.