IIIA-2 successful LPE growth and laser operation of Al 0.6 Ga 0.4 As/In 0.5 Ga 0.5 P/Al 0.6 Ga 0.4 As double-heterostructure material

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 21; no. 11; p. 738
Main Authors Miller, B.I., Johnston, W.D.
Format Journal Article
LanguageEnglish
Published 01.11.1974
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ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1974.18016