Electrically reconfigurable MoO 3 /InSe van der Waals heterojunctions

• Published in: 2d materials Vol. 12; no. 1; p. 15010
• Main Authors: Chen, Jiancui, Song, Peng, Wei, Chijun, Wu, Kang, Wang, Hao, Liu, Xuanye, Gao, Hui, Guo, Hui, Yang, Haitao, Bao, Lihong, Gao, Hong-Jun
• Format: Journal Article
• Language: English
• Published: 01.01.2025
• ISSN: 2053-1583; 2053-1583
• DOI: 10.1088/2053-1583/ad8938

Abstract Van der Waals (vdW) heterojunctions formed by stacking different layers of two-dimensional atomic crystals with atomically sharp interface and versatile band alignment have been considered as promising candidates for construction of nanoelectronic and nanophotonic devices. Here, we demonstrate the electrically reconfigurable behavior in MoO 3 /indium selenide (InSe) vdW heterojunction with a type-III broken-gap band alignment. The electrical reconfigurability is enabled by the ambipolar transport property of InSe, which is achieved through the use of Pt as contact electrodes. By electrostatically doping the InSe, the reconfigurable MoO 3 /InSe heterojunctions can be converted between p-n and n + - n junctions. As a current rectifier, the MoO 3 /InSe heterojunction shows rectification ratios of ∼10 7 and ∼10 4 for forward and backward bias conditions, respectively. As a photodetector, the MoO 3 /InSe heterojunction shows stable photo-switching behavior with a ∼10 5 on/off ratio and an ultralow dark current (≈10 fA). The response time is measured to be 500 μ s and 300 μ s for rise and fall processes, respectively. These results highlight the role of MoO 3 with high electron affinity in construction of vdW heterostructure with type-III band alignment and provide a new platform for high performance optoelectronic devices.