Effect of Substrate Orientation on the Growth Direction of In x Ga 1-x As Nanowires (NWs)
Abstract We have grown the In x Ga l- x As NWs on GaAs(lll), GaAs(100) and Si(lll) substrates via Vapor-Solid-Solid (VSS) mode using MOCVD. We observed that the cylindrical NWs grow perpendicular to the GaAs(lll) substrate. The straight line NWs with an angle of 50.60° to the normal were occurred on...
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Published in | IOP conference series. Materials Science and Engineering Vol. 395; no. 1; p. 12003 |
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Main Authors | , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.07.2018
|
Online Access | Get full text |
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Summary: | Abstract
We have grown the In
x
Ga
l-
x
As NWs on GaAs(lll), GaAs(100) and Si(lll) substrates via Vapor-Solid-Solid (VSS) mode using MOCVD. We observed that the cylindrical NWs grow perpendicular to the GaAs(lll) substrate. The straight line NWs with an angle of 50.60° to the normal were occurred on GaAs(l00), while kinks NWs were perceived on Si(lll). We found that the growth direction of the In
x
Ga
l-
x
As NWs can be easily controlled using certain orientation of the substrate by considering its lattice mismatch and its surface energy. |
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ISSN: | 1757-8981 1757-899X |
DOI: | 10.1088/1757-899X/395/1/012003 |