Effect of Substrate Orientation on the Growth Direction of In x Ga 1-x As Nanowires (NWs)

Abstract We have grown the In x Ga l- x As NWs on GaAs(lll), GaAs(100) and Si(lll) substrates via Vapor-Solid-Solid (VSS) mode using MOCVD. We observed that the cylindrical NWs grow perpendicular to the GaAs(lll) substrate. The straight line NWs with an angle of 50.60° to the normal were occurred on...

Full description

Saved in:
Bibliographic Details
Published inIOP conference series. Materials Science and Engineering Vol. 395; no. 1; p. 12003
Main Authors Wibowo, E, Ulya, N, Othaman, Z, Marwoto, P, Sumpono, I, Aji, M P, Sulhadi, Astuti, B, Rokhmat, M, Suwandi, Ismardi, A, Sutisna
Format Journal Article
LanguageEnglish
Published 01.07.2018
Online AccessGet full text

Cover

More Information
Summary:Abstract We have grown the In x Ga l- x As NWs on GaAs(lll), GaAs(100) and Si(lll) substrates via Vapor-Solid-Solid (VSS) mode using MOCVD. We observed that the cylindrical NWs grow perpendicular to the GaAs(lll) substrate. The straight line NWs with an angle of 50.60° to the normal were occurred on GaAs(l00), while kinks NWs were perceived on Si(lll). We found that the growth direction of the In x Ga l- x As NWs can be easily controlled using certain orientation of the substrate by considering its lattice mismatch and its surface energy.
ISSN:1757-8981
1757-899X
DOI:10.1088/1757-899X/395/1/012003