A universal resist-assisted metal transfer method for 2D semiconductor contacts

• Published in: Chinese physics B
• Main Authors: Liu, Xuanye, Li, Linxuan, Wei, Chijun, Song, Peng, Gao, Hui, Wu, Kang, Jiazila, Nuertai, Sun, Jiequn, Guo, Hui, Yang, Haitao, Zhou, Wu, Bao, Lihong, Gao, Hong-Jun
• Format: Journal Article
• Language: English
• Published: 01.11.2024
• ISSN: 1674-1056; 2058-3834
• DOI: 10.1088/1674-1056/ad8db4

Abstract With the explosive exploration of two-dimensional (2D) semiconductors for device applications, ensuring effective electrical contacts has become critical for optimizing device performance. Here, we demonstrate a universal resist-assisted metal transfer method for creating nearly free-standing metal electrodes on the SiO 2 /Si substrate, which can be easily transferred onto 2D semiconductors to form van der Waals (vdW) contacts. In this method, polymethyl methacrylate (PMMA) serves both as an electron resist for electrode patterning and as a sacrificial layer. Contacted with our transferred electrodes, MoS₂ exhibits tunable Schottky barrier heights and a transition from n-type dominated to ambipolar conduction with increasing metal work functions, while InSe shows pronounced ambipolarity. Additionally, using α-In 2 Se 3 as an example, we demonstrate that our transferred electrodes enhance resistance switching in ferroelectric memristors. Finally, the universality of our method is evidenced by the successful transfer of various metals with different adhesion forces and complex patterns.