Angular and planar transport properties of antiferromagnetic V 5 S 8

• Published in: Chinese physics B Vol. 33; no. 2; p. 27503
• Main Authors: Wu 吴, Xiao-Kai 晓凯, Wang 王, Bin 彬, Wu 吴, De-Tong 德桐, Chen 陈, Bo-Wen 博文, Mi 弭, Meng-Juan 孟娟, Wang 王, Yi-Lin 以林, Shen 沈, Bing 冰
• Format: Journal Article
• Language: English
• Published: 01.01.2024
• ISSN: 1674-1056; 2058-3834
• DOI: 10.1088/1674-1056/ad15f9

Systemically angular and planar transport investigations are performed in layered antiferromagnetic (AF) V 5 S 8 . In this AF system, obvious anomalous Hall effect (AHE) is observed with a large Hall angle of 0.1 compared to that in ferromagnetic (FM) system. It can persist to the temperatures above AF transition and exhibit strong angular field dependence. The phase diagram reveals various magnetic states by rotating the applied field. By analyzing the anisotropic transport behavior, magnon contributions are revealed and exhibit obvious angular dependence with a spin-flop vanishing line. The observed prominent planar Hall effect and anisotropic magnetoresisitivity exhibit two-fold systematical angular dependent oscillations. These behaviors are attributed to the scattering from spin–orbital coupling instead of nontrivial topological origin. Our results reveal anisotropic interactions of magnetism and electron in V 5 S 8 , suggesting potential opportunities for the AF spintronic sensor and devices.