Defects induced changes in conduction bands of HfS 2

Abstract We report on a comprehensive study of the electronic structures of the layered semiconductor 1T-HfS 2 by employing angle-resolved photoemission spectroscopy (ARPES). With in - situ potassium doping, the band structures of HfS 2 could be tuned, and both of the valence band and the conduction...

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Bibliographic Details
Published inPhysica scripta Vol. 99; no. 3; p. 35948
Main Authors Lin, Yu, Xiao, Shaozhu, Zhang, Xin, Liu, Wei, He, Yunpeng, Zhou, Zheng, Yang, Xiufu, Zhang, Shiju, He, Shaolong, Guo, Yanfeng, Zhao, Yong
Format Journal Article
LanguageEnglish
Published 01.03.2024
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Summary:Abstract We report on a comprehensive study of the electronic structures of the layered semiconductor 1T-HfS 2 by employing angle-resolved photoemission spectroscopy (ARPES). With in - situ potassium doping, the band structures of HfS 2 could be tuned, and both of the valence band and the conduction band could be observed. S vacancy defects could be induced by post-annealing of HfS 2 and a certain amount of S vacancies would result in a peculiar change of the conduction band at M ¯ point— the fracture of the conduction band bottom. Our results could provide key information for the defect studies and the application of HfS 2 .
ISSN:0031-8949
1402-4896
DOI:10.1088/1402-4896/ad274f