Improvement of resistive switching in δ-CsPbI 3 devices by inserting carbon nanotube

Abstract CsPbI 3 is considered to one potential material in the future resistive random access memory(RRAM). There are four crystal types of CsPbI 3 , among which δ phase is the most stable and available to commercialize. However, the inherent defect of δ -CsPbI 3 results in its inferior switching p...

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Bibliographic Details
Published inPhysica scripta Vol. 98; no. 3; p. 35025
Main Authors Yang, Xiaoting, Ye, Zhanhong, Wang, Ke, Zhang, Ruoxuan, Wei, Huanqi, Cui, Yimin
Format Journal Article
LanguageEnglish
Published 01.03.2023
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Summary:Abstract CsPbI 3 is considered to one potential material in the future resistive random access memory(RRAM). There are four crystal types of CsPbI 3 , among which δ phase is the most stable and available to commercialize. However, the inherent defect of δ -CsPbI 3 results in its inferior switching performance to other crystal types. Here, we present a new structure to solve this problem. Carbon nanotube (CNT) was inserted into the two interfaces of Ag/ δ -CsPbI 3 /ITO and Ag/ δ -CsPbI 3 /FTO to adjust its resistance switching performance. It is found that the introduction of carbon nanotube layer can effectively control durability of RRAM devices through influencing strength of conductive filaments. These findings present a new strategy for the future design of δ -CsPbI 3 memory.
ISSN:0031-8949
1402-4896
DOI:10.1088/1402-4896/acbbb0