Linear dispersion of Dirac fermions in (Cd 1–x–y Zn x Mn y ) 3 As 2 , х+y = 0.2, у = 0.02, 0.04, 0.06, 0.08 solid solutions
Abstract Based on the results of the Shubnikov-de Haas oscillations study in single-crystalline diluted magnetic semiconductors (Cd 1−x−y Zn x Mn y ) 3 As 2 (CZMA) with х + y = 0.2 and Mn content ( у = 0.02, 0.04, 0.06, 0.08) at temperatures T = 4.2 to 30 K and magnetic fields B = 0 to 12 T un...
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Published in | Physica scripta Vol. 96; no. 12; p. 125856 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.12.2021
|
Online Access | Get full text |
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Summary: | Abstract
Based on the results of the Shubnikov-de Haas oscillations study in single-crystalline diluted magnetic semiconductors (Cd
1−x−y
Zn
x
Mn
y
)
3
As
2
(CZMA) with
х
+
y
= 0.2 and Mn content (
у
= 0.02, 0.04, 0.06, 0.08) at temperatures
T
= 4.2 to 30 K and magnetic fields
B
= 0 to 12 T under hydrostatic pressure
p
= 0 and 10 kbar, the values of the phase shift
β
, indicating the existence of the Berry phase in all samples were determined. Thickness of two-dimensional surface topological nanolayers in CZMA (
х
+
y
= 0.2) single crystals was defined. The rise in Mn concentration led to an increase in the concentration of charge carriers in the 2D surface layers
n
2
D
and a decrease in its mobility
μ
2D
. The reduced cyclotron mass
m
с
(0)/
m
0
, depending on the Fermi wave vector
k
F
, experimentally observed from the Shubnikov-de Haas oscillations, which was in a good agreement with the prediction theory of linear dependence and experimental results in topological insulator single crystals Bi
2
Se
3
indicated that Dirac fermions were present in a diluted magnetic semiconductor CZMA system with
х
+
y
= 0.2. The damping of the Shubnikov-de Haas oscillations for pressures
p
= 0 and 10 kbar in the CZMA sample (
х
+
y
= 0.2;
y
= 0.2) was found to be associated with an amplitude decrease by spin splitting (Zeeman effect). From the analysis of experimental data, the effective Lande factor
g
= 7.63 and 7.87 and the band gap Δ =35.3 and 9.7 meV at p = 0 and 10 kbar, respectively, were obtained. |
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ISSN: | 0031-8949 1402-4896 |
DOI: | 10.1088/1402-4896/ac3873 |