Novel (CH 3 NH 3 ) 3 Bi 2 I 9 perovskite solar cells processed by in-situ gas–solid reaction

(CH 3 NH 3 ) 3 Bi 2 I 9 thin films were synthesized via direct metal surface element reaction using bismuth thin films as precursors, which are simple to operate at low energy consumption, without organic solvent added to the reaction process. The film prepared at 220 °C for 3 h not only exhibits be...

Full description

Saved in:
Bibliographic Details
Published inSemiconductor science and technology Vol. 40; no. 4; p. 45012
Main Authors Zhao, Chaoliang, Yu, Haili, Zhang, Busheng, Wang, Lingling, Zheng, Zhi
Format Journal Article
LanguageEnglish
Published 30.04.2025
Online AccessGet full text
ISSN0268-1242
1361-6641
DOI10.1088/1361-6641/adb87a

Cover

More Information
Summary:(CH 3 NH 3 ) 3 Bi 2 I 9 thin films were synthesized via direct metal surface element reaction using bismuth thin films as precursors, which are simple to operate at low energy consumption, without organic solvent added to the reaction process. The film prepared at 220 °C for 3 h not only exhibits better crystallinity and compactness but also remains stable when exposed to air for more than 100 d. In this work, a novel gas–solid reaction mechanism is described. Transient surface photovoltage indicates that the synthesized (CH 3 NH 3 ) 3 Bi 2 I 9 film is a p-type semi-conductor material. The solar cell with the structure FTO/TiO 2 /(CH 3 NH 3 ) 3 Bi 2 I 9 /Spiro-OMeTAD/Au obtained a power conversion efficiency of 0.039%.
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/adb87a