APA (7th ed.) Citation

Houng, M., & Chang, Y. (1989). Electronic structures of In1− x Ga x As-InP strained-layer quantum wells. Journal of applied physics, 65(8), 3096-3100. https://doi.org/10.1063/1.342705

Chicago Style (17th ed.) Citation

Houng, Mau-Phon, and Yia-Chung Chang. "Electronic Structures of In1− X Ga X As-InP Strained-layer Quantum Wells." Journal of Applied Physics 65, no. 8 (1989): 3096-3100. https://doi.org/10.1063/1.342705.

MLA (9th ed.) Citation

Houng, Mau-Phon, and Yia-Chung Chang. "Electronic Structures of In1− X Ga X As-InP Strained-layer Quantum Wells." Journal of Applied Physics, vol. 65, no. 8, 1989, pp. 3096-3100, https://doi.org/10.1063/1.342705.