Electronic structures of In1− x Ga x As-InP strained-layer quantum wells

The band structures of In1−xGaxAs-InP strained-layer quantum wells are investigated theoretically in the bond-orbital model. For small x, the well material is subject to a compressive biaxial strain which lifts the HH1 subband further apart from the LH1 subband, resulting in smaller in-plane effecti...

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Bibliographic Details
Published inJournal of applied physics Vol. 65; no. 8; pp. 3096 - 3100
Main Authors Houng, Mau-Phon, Chang, Yia-Chung
Format Journal Article
LanguageEnglish
Published 15.04.1989
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Summary:The band structures of In1−xGaxAs-InP strained-layer quantum wells are investigated theoretically in the bond-orbital model. For small x, the well material is subject to a compressive biaxial strain which lifts the HH1 subband further apart from the LH1 subband, resulting in smaller in-plane effective mass for holes. For large x, the strain becomes tensile and the LH1 subband is lifted upward with respect to the HHl subband. For x near the critical value, where the HHl and LHl energy levels cross each other, the valence-band structure undergoes a direct-to-indirect transition.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.342705