DFT and SCAPS-1D calculations of FASnI 3 -based perovskite solar cell using ZnO as an electron transport layer

In this work, we used both DFT and TDDFT to investigate the structural, electronic and optical properties of the Hybrid Organic-Inorganic FASnI 3 perovskite. Indeed, we apply the DFT approach implemented under Quantum Espresso code to investigate and discuss the solar perovskite FASnI 3 applying the...

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Bibliographic Details
Published inEuropean physical journal. Applied physics Vol. 98; p. 60
Main Authors El Arfaoui, Youssef, Khenfouch, Mohammed, Habiballah, Nabil
Format Journal Article
LanguageEnglish
Published 2023
Online AccessGet full text
ISSN1286-0042
1286-0050
DOI10.1051/epjap/2023230099

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Summary:In this work, we used both DFT and TDDFT to investigate the structural, electronic and optical properties of the Hybrid Organic-Inorganic FASnI 3 perovskite. Indeed, we apply the DFT approach implemented under Quantum Espresso code to investigate and discuss the solar perovskite FASnI 3 applying the calculation approximations: GGA-PBE and GGA-PBESol. When applying the PBE approximation, the band structure demonstrates that this perovskite has a direct band gap of (1.36 eV), which agrees well with the results of the existing experiments. The DOS and PDOS have been illustrated and discussed for the two cases. We have also examined including the spin-orbit coupling effect on the band gap of this material, in addition, the optical properties of FASnI 3 have been computed and discussed. The band gap and optical properties allowed us to assume that this material could potentially be the best match for photovoltaic use. Further, applying SCAPS software, an n-i-p planar FASnI 3 solar perovskite device was modeled and simulated. The device performances have simulated with (ZnO, ZnS, ZnSe, TiO 2 and CdS) materials as an Electron Transport Layers. It is found that various factors influencing the device performance such as the thickness of the FASnI 3 , different ETLs. Moreover, the impact of temperature, the impact of active layer defect level and doping level were also investigated and discussed. The simulation results demonstrates that high efficiency of 28.13% can be produced with a thickness of FASnI 3 absorber around 600 nm, and a total defect density of 10 14 cm −3 with (ZnO) as an ETL at a temperature of 300k. Finally, these theoretical simulation results could pave the path to design and fabricate efficient, lead-free PSCs.
ISSN:1286-0042
1286-0050
DOI:10.1051/epjap/2023230099