Synergistic Effects of Deposition Temperatures for Active and Gate Insulator of Top-Gate Thin-Film Transistors Using InGaZnO Channels Prepared by Thermal Atomic-Layer Deposition

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Bibliographic Details
Published inACS applied electronic materials
Main Authors Seo, Ye-Jin, Lee, Jae-Wook, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Yoon, Sung-Min
Format Journal Article
LanguageEnglish
Published 30.09.2024
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ISSN:2637-6113
2637-6113
DOI:10.1021/acsaelm.4c01380