Control of Interfacial Defect States in the Flexible InGaZnO Thin Film Transistor with a 6FDA-MDA Gate Insulator by Using an Al 2 O 3 Interlayer

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Bibliographic Details
Published inACS applied electronic materials Vol. 6; no. 2; pp. 1151 - 1160
Main Authors Kim, Min Jung, Park, Hyunjin, Hong, Hyunmin, Yoo, Sungmi, Jeong, Kwangsik, Kim, Yun Ho, Chung, Kwun-Bum
Format Journal Article
LanguageEnglish
Published 27.02.2024
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ISSN:2637-6113
2637-6113
DOI:10.1021/acsaelm.3c01554