Quantitative SIMS depth profiling of Al in AlGaN/AlN/GaN HEMT structures with nanometer-thin layers Quantitative SIMS depth profiling of AlGaN HEMT structures

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Bibliographic Details
Published inSurface and interface analysis Vol. 49; no. 2; pp. 117 - 121
Main Authors Yunin, P.A., Drozdov, Yu.N., Drozdov, M.N., Khrykin, O.I., Shashkin, V.I.
Format Journal Article
LanguageEnglish
Published 01.02.2017
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ISSN:0142-2421
DOI:10.1002/sia.6068