Simulation of transport in laterally gated junctionless transistors fabricated by local anodization with an atomic force microscope Simulation of transport in laterally gated junctionless transistors

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Bibliographic Details
Published inPhysica status solidi. A, Applications and materials science Vol. 210; no. 9; pp. 1914 - 1919
Main Authors Larki, Farhad, Dehzangi, Arash, Saion, E. B., Abedini, Alam, Hutagalung, Sabar D., Abdullah, A. Makarimi, Hamidon, M. N.
Format Journal Article
LanguageEnglish
Published 01.09.2013
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ISSN:1862-6300
DOI:10.1002/pssa.201228775