Pressure‐Driven Intrinsic Quantum Confinement and Semiconducting‐to‐Metallic Transition in the Topological Flat Bands Kagome Nb 3 Cl 8 Compounds
Nb 3 Cl 8 is a unique subset of 2D crystalline materials renowned for their Kagome structure and distinctive flat energy bands. These bands contribute to the distinct electronic behavior, rendering Nb 3 Cl 8 a compelling subject for study. In this study, by employing ab initio calculations, the impa...
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Published in | Advanced theory and simulations Vol. 7; no. 7 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
01.07.2024
|
Online Access | Get full text |
ISSN | 2513-0390 2513-0390 |
DOI | 10.1002/adts.202400185 |
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Summary: | Nb
3
Cl
8
is a unique subset of 2D crystalline materials renowned for their Kagome structure and distinctive flat energy bands. These bands contribute to the distinct electronic behavior, rendering Nb
3
Cl
8
a compelling subject for study. In this study, by employing ab initio calculations, the impact of pressure on the electronic properties of Nb
3
Cl
8
is scrutinized, yielding valuable insights. Under high pressures, Nb
3
Cl
8
undergoes a transition from a semiconductor state (with a 1.23 eV bandgap) to a metallic one, accompanied by electronic band restructuration. Notably, the flat energy bands are suppressed with increasing pressure. Furthermore, this investigation underscores the distinctive nature of flat energy bands in Nb
3
Cl
8
, delving into quantum effects, particularly their association with the quantum confinement of electronic states. The confinement of charge carriers in Nb
3
Cl
8
results in discrete energy levels, corresponding to specific orbitals in the density of states, indicating robust electron confinement. Pressure‐induced changes in the energy gap between these quantized levels suggest a decrease in confinement strength. Consequently, the study lays a robust foundation for future exploration, contributing to the development of innovative electronic devices grounded in quantum confinement effects. |
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ISSN: | 2513-0390 2513-0390 |
DOI: | 10.1002/adts.202400185 |