Pressure‐Driven Intrinsic Quantum Confinement and Semiconducting‐to‐Metallic Transition in the Topological Flat Bands Kagome Nb 3 Cl 8 Compounds

Nb 3 Cl 8 is a unique subset of 2D crystalline materials renowned for their Kagome structure and distinctive flat energy bands. These bands contribute to the distinct electronic behavior, rendering Nb 3 Cl 8 a compelling subject for study. In this study, by employing ab initio calculations, the impa...

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Bibliographic Details
Published inAdvanced theory and simulations Vol. 7; no. 7
Main Authors Bouhmouche, Ayoub, Rhrissi, Ilyass, Moubah, Reda
Format Journal Article
LanguageEnglish
Published 01.07.2024
Online AccessGet full text
ISSN2513-0390
2513-0390
DOI10.1002/adts.202400185

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Summary:Nb 3 Cl 8 is a unique subset of 2D crystalline materials renowned for their Kagome structure and distinctive flat energy bands. These bands contribute to the distinct electronic behavior, rendering Nb 3 Cl 8 a compelling subject for study. In this study, by employing ab initio calculations, the impact of pressure on the electronic properties of Nb 3 Cl 8 is scrutinized, yielding valuable insights. Under high pressures, Nb 3 Cl 8 undergoes a transition from a semiconductor state (with a 1.23 eV bandgap) to a metallic one, accompanied by electronic band restructuration. Notably, the flat energy bands are suppressed with increasing pressure. Furthermore, this investigation underscores the distinctive nature of flat energy bands in Nb 3 Cl 8 , delving into quantum effects, particularly their association with the quantum confinement of electronic states. The confinement of charge carriers in Nb 3 Cl 8 results in discrete energy levels, corresponding to specific orbitals in the density of states, indicating robust electron confinement. Pressure‐induced changes in the energy gap between these quantized levels suggest a decrease in confinement strength. Consequently, the study lays a robust foundation for future exploration, contributing to the development of innovative electronic devices grounded in quantum confinement effects.
ISSN:2513-0390
2513-0390
DOI:10.1002/adts.202400185