Crystallization of amorphous silicon beyond the crystallized polycrystalline silicon region induced by metal nickel
Crystallization of amorphous silicon（a-Si） which starts from the middle of the a-Si region separating two adjacent metal-induced crystallization（MIC） polycrystalline silicon（poly-Si） regions is observed. The crystallization is found to be related to the distance between the neighboring nickel-introd...
Saved in:
| Published in | 中国物理B：英文版 no. 1; pp. 357 - 360 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
2017
|
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 |
Cover
| Summary: | Crystallization of amorphous silicon（a-Si） which starts from the middle of the a-Si region separating two adjacent metal-induced crystallization（MIC） polycrystalline silicon（poly-Si） regions is observed. The crystallization is found to be related to the distance between the neighboring nickel-introducing MIC windows. Trace nickel that diffuses from the MIC window into the a-Si matrix during the MIC heat-treatment is experimentally discovered, which is responsible for the crystallization of the a-Si beyond the MIC front. A minimum diffusion coefficient of 1.84×10-9cm2/s at 550℃ is estimated for the trace nickel diffusion in a-Si. |
|---|---|
| Bibliography: | Dongli Zhang;Mingxiang Wang;Man Wong;Hoi-Sing Kwok;Department of Microelectronics,Soochow University;Center for Display Research,Department of Electronic and Computer Engineering,the Hong Kong University of Science and Technology 11-5639/O4 |
| ISSN: | 1674-1056 2058-3834 |