Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress简

• Published in: 中国物理B：英文版 no. 12; pp. 511 - 517
• Main Author: 张立忠 王源 何燕冬
• Format: Journal Article
• Language: English
• Published: 2016
• ISSN: 1674-1056; 2058-3834

The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier(DTSCR) is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing(TLP) test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal–oxide–semiconductor(CMOS) process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR.