Nanoscale spatial phase modulation of GaAs growth in V-grooved trenches on Si(001) substrate简

• Published in: 中国物理B：英文版 no. 12; pp. 455 - 458
• Main Author: 李士颜 周旭亮 孔祥挺 李梦珂 米俊萍 王梦琦 潘教青
• Format: Journal Article
• Language: English
• Published: 2016
• ISSN: 1674-1056; 2058-3834

This letter reports the nanoscale spatial phase modulation of Ga As growth in V-grooved trenches fabricated on a Si(001) substrate by metal–organic vapor-phase epitaxy. Two hexagonal Ga As regions with high density of stacking faults parallel to Si {111} surfaces are observed. A strain-relieved and defect-free cubic phase Ga As was achieved above these highly defective regions. High-resolution transmission electron microscopy and fast Fourier transforms analysis were performed to characterize these regions of Ga As/Si interface. We also discussed the strain relaxation mechanism and phase structure modulation of Ga As selectively grown on this artificially manipulated surface.