Nanoscale spatial phase modulation of GaAs growth in V-grooved trenches on Si(001) substrate简

This letter reports the nanoscale spatial phase modulation of Ga As growth in V-grooved trenches fabricated on a Si(001) substrate by metal–organic vapor-phase epitaxy. Two hexagonal Ga As regions with high density of stacking faults parallel to Si {111} surfaces are observed. A strain-relieved and...

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Published in中国物理B：英文版 no. 12; pp. 455 - 458
Main Author 李士颜 周旭亮 孔祥挺 李梦珂 米俊萍 王梦琦 潘教青
Format Journal Article
LanguageEnglish
Published 2016
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ISSN1674-1056
2058-3834

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Summary:This letter reports the nanoscale spatial phase modulation of Ga As growth in V-grooved trenches fabricated on a Si(001) substrate by metal–organic vapor-phase epitaxy. Two hexagonal Ga As regions with high density of stacking faults parallel to Si {111} surfaces are observed. A strain-relieved and defect-free cubic phase Ga As was achieved above these highly defective regions. High-resolution transmission electron microscopy and fast Fourier transforms analysis were performed to characterize these regions of Ga As/Si interface. We also discussed the strain relaxation mechanism and phase structure modulation of Ga As selectively grown on this artificially manipulated surface.
Bibliography:11-5639/O4
ISSN:1674-1056
2058-3834