Robust Performance of AlGaN-Channel Metal-Insulator-Semiconductor High-Electron-Mobility Transistors at High Temperatures

• Published in: 中国物理快报：英文版 no. 12; pp. 79 - 82
• Main Author: 张力 张金风 张苇杭 张涛 徐雷 张进成 郝跃
• Format: Journal Article
• Language: English
• Published: 2017
• ISSN: 0256-307X; 1741-3540

Superior characteristics of Al Ga N-channel metal-insulator-semiconductor(MIS) high electron mobility transistors(HEMTs) at high temperatures are demonstrated in detail. The temperature coefficient of the maximum saturation drain current for the Al GaN-channel MIS HEMT can be reduced by 50% compared with the Ga N-channel HEMT. Moreover, benefiting from the better suppression of gate current and reduced leakage current in the buffer layer, the Al Ga N-channel MIS HEMT demonstrates an average breakdown electric field of 1.83 MV/cm at25℃ and 1.06 MV/cm at 300℃, which is almost 2 times and 3 times respectively larger than that of the reference Ga N-channel HEMT. Pulsed mode analyses suggest that the proposed device suffers from smaller current collapse when the temperature reaches as high as 300℃.