Observation of oscillations in the transport for atomic layer MoS_2
In our experiment, an atomic layer MoS_2 structure grown on SiO_2/Si substrates is used in transport test. The voltage U14,23 oscillates and the corresponding period varies with applied current. The largest period appears at 45 μA. The oscillation periods are different when samples are under laser r...
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Published in | 中国物理B:英文版 Vol. 27; no. 2; pp. 602 - 606 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
2018
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Subjects | |
Online Access | Get full text |
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Summary: | In our experiment, an atomic layer MoS_2 structure grown on SiO_2/Si substrates is used in transport test. The voltage U14,23 oscillates and the corresponding period varies with applied current. The largest period appears at 45 μA. The oscillation periods are different when samples are under laser radiation or in darkness. We discover that under the laser irradiation, the oscillation period occurs at lower current than in the darkness case. Meanwhile, the drift velocity is estimated at ~10~7 cm/s. Besides, by studying the envelope of U14,23 versus applied current, we see a beating phenomenon at a certain current value. The beating period in darkness is larger than under laser irradiation. The difference between beating periods reveals the energy difference of electrons. Similar results are obtained by using different laser power densities and different light sources. The possible mechanism behind the oscillation period is discussed. |
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Bibliography: | Xiao-Qiang Xie1, Ying-Zi Peng1,2, Qi-Ye Zheng1, Yuan Li1,2, and Ji Chen1( 1 Department of Physics, School of Sciences, Hangzhou Dianzi University, Hangzhou 310018, China 2 Center for Integrated Spintronic Devices, Hangzhou Dianzi University, Hangzhou 310018, China) 11-5639/O4 In our experiment, an atomic layer MoS_2 structure grown on SiO_2/Si substrates is used in transport test. The voltage U14,23 oscillates and the corresponding period varies with applied current. The largest period appears at 45 μA. The oscillation periods are different when samples are under laser radiation or in darkness. We discover that under the laser irradiation, the oscillation period occurs at lower current than in the darkness case. Meanwhile, the drift velocity is estimated at ~10~7 cm/s. Besides, by studying the envelope of U14,23 versus applied current, we see a beating phenomenon at a certain current value. The beating period in darkness is larger than under laser irradiation. The difference between beating periods reveals the energy difference of electrons. Similar results are obtained by using different laser power densities and different light sources. The possible mechanism behind the oscillation period is discussed. atomic-layer MoS2 oscillations in the transport circular polarized light photo-excited carriers |
ISSN: | 1674-1056 2058-3834 |