Total ionizing dose effects and annealing behaviors of HfO_2-based MOS capacitor

With the continuously scaling down of semiconductor technology,the traditional SiO_2as gate dielectric is approaching the physical and electrical limits.Some problems,such as the increasing leakage current and reliability issues,seriously affect the transistor performance[1].HfO_2 has been considere...

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Bibliographic Details
Published in中国科学：信息科学（英文版） Vol. 60; no. 12; pp. 107 - 109
Main Author Yannan XU;Jinshun BI;Gaobo XU;Kai XI;Bo LI;Ming LIU
Format Journal Article
LanguageEnglish
Published 2017
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Summary:With the continuously scaling down of semiconductor technology,the traditional SiO_2as gate dielectric is approaching the physical and electrical limits.Some problems,such as the increasing leakage current and reliability issues,seriously affect the transistor performance[1].HfO_2 has been considered to be one of the reasonable alternative solutions due to a suitable dielectric constant（about 25）,the relatively large band gap（5.68 e V）
Bibliography:With the continuously scaling down of semiconductor technology,the traditional SiO_2as gate dielectric is approaching the physical and electrical limits.Some problems,such as the increasing leakage current and reliability issues,seriously affect the transistor performance[1].HfO_2 has been considered to be one of the reasonable alternative solutions due to a suitable dielectric constant（about 25）,the relatively large band gap（5.68 e V）
11-5847/TP
annealing,dielectric,capacitor,seriously,transistor,scaling,leakage,semicon,trapping,continuously
ISSN:1674-733X
1869-1919