Analysis of the modulation mechanisms of the electric field and breakdown performance in AIGaN/GaN HEMT with a T-shaped field-plate

• Published in: 中国物理B：英文版 Vol. 25; no. 12; pp. 430 - 434
• Main Author: 毛维 范举胜 杜鸣 张金风 郑雪峰 王冲 马晓华 张进成 郝跃
• Format: Journal Article
• Language: English
• Published: 2016
• Subjects: AlGaN/GaN; HEMT; 击穿电压; 场板; 性能分析; 机制; 电场分布; 高电子迁移率晶体管

A novel A1GaN/GaN high electron mobility transistor （HEMT） with a source-connected T-shaped field-plate （ST-FP HEMT） is proposed for the first time in this paper. The source-connected T-shaped field-plate （ST-FP） is composed of a source-connected field-plate （S-FP） and a trench metal. The physical i...