Analysis of the modulation mechanisms of the electric field and breakdown performance in AIGaN/GaN HEMT with a T-shaped field-plate

• Published in: 中国物理B：英文版 Vol. 25; no. 12; pp. 430 - 434
• Main Author: 毛维 范举胜 杜鸣 张金风 郑雪峰 王冲 马晓华 张进成 郝跃
• Format: Journal Article
• Language: English
• Published: 2016
• Subjects: AlGaN/GaN; HEMT; 击穿电压; 场板; 性能分析; 机制; 电场分布; 高电子迁移率晶体管
• ISSN: 1674-1056; 2058-3834

A novel A1GaN/GaN high electron mobility transistor （HEMT） with a source-connected T-shaped field-plate （ST-FP HEMT） is proposed for the first time in this paper. The source-connected T-shaped field-plate （ST-FP） is composed of a source-connected field-plate （S-FP） and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP （S-FP HEMT） shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications.