Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In（0.82）Ga（0.18）As buffer layer
Microstructure and misfit dislocation behavior in InxGa（1-x）As/InP heteroepitaxial materials grown by low pressure metal organic chemical vapor deposition（LP-MOCVD） were analyzed by high resolution transmission electron microscopy（HRTEM）, scanning electron microscopy（SEM）, atomic force microscopy（AF...
Saved in:
| Published in | 光电子快报：英文版 Vol. 12; no. 6; pp. 441 - 445 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
2016
|
| Online Access | Get full text |
| ISSN | 1673-1905 1993-5013 |
Cover
| Summary: | Microstructure and misfit dislocation behavior in InxGa（1-x）As/InP heteroepitaxial materials grown by low pressure metal organic chemical vapor deposition（LP-MOCVD） were analyzed by high resolution transmission electron microscopy（HRTEM）, scanning electron microscopy（SEM）, atomic force microscopy（AFM）, Raman spectroscopy and Hall effect measurements. To optimize the structure of In（0.82）Ga（0.18）As/InP heterostructure, the InxGa（1-x）As buffer layer was grown. The residual strain of the In（0.82）Ga（0.18）As epitaxial layer was calculated. Further, the periodic growth pattern of the misfit dislocation at the interface was discovered and verified. Then the effects of misfit dislocation on the surface morphology and microstructure of the material were studied. It is found that the misfit dislocation of high indium（In） content In（0.82）Ga（0.18）As epitaxial layer has significant influence on the carrier concentration. |
|---|---|
| Bibliography: | Microstructure and misfit dislocation behavior in InxGa（1-x）As/InP heteroepitaxial materials grown by low pressure metal organic chemical vapor deposition（LP-MOCVD） were analyzed by high resolution transmission electron microscopy（HRTEM）, scanning electron microscopy（SEM）, atomic force microscopy（AFM）, Raman spectroscopy and Hall effect measurements. To optimize the structure of In（0.82）Ga（0.18）As/InP heterostructure, the InxGa（1-x）As buffer layer was grown. The residual strain of the In（0.82）Ga（0.18）As epitaxial layer was calculated. Further, the periodic growth pattern of the misfit dislocation at the interface was discovered and verified. Then the effects of misfit dislocation on the surface morphology and microstructure of the material were studied. It is found that the misfit dislocation of high indium（In） content In（0.82）Ga（0.18）As epitaxial layer has significant influence on the carrier concentration. 12-1370/TN WEI Qiu-lin 1, GUO Zuo-xing 1, ZHAO Lei1, ZHAO Liang1, YUAN De-zeng1 ,MIAO Guo-qing 2,XIA Mao-sheng1 （1. Key Laboratory of Automobile Materials of Ministry of Education of China, College of Materials Science and Engineering, Jilin University, Changchun 130025, China ;2. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China） indium epitaxial dislocation verified optimize MOCVD HRTEM mismatch scatter arrangement |
| ISSN: | 1673-1905 1993-5013 |