室温条件下射频磁控溅射法制备AZO薄膜的结构与光电性能

采用高致密度靶材在室温条件下玻璃衬底上RF磁控溅射制备铝掺杂氧化锌（AZO）薄膜。用X射线衍射仪、冷场发射扫描电子显微镜、紫外可见光分光光度计、四探针测试仪和霍尔测试仪分析表征薄膜的显微组织、表面形貌和光电学性能。结果表明,所制备的薄膜均为多晶六方纤锌矿结构,溅射功率对AZO薄膜的光电学性能,尤其是电学性能有重要影响。不同溅射功率下薄膜可见光平均透过率均大于85%,当溅射功率为200 W时,获得最小电阻率4.5×10^-4Ω·cm和87.1%的透过率。AZO薄膜禁带宽度随溅射功率不同在3.48-3.68 e V范围内变化。...

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Published in中国有色金属学报：英文版 Vol. 26; no. 6; pp. 1655 - 1662
Main Author 孙宜华 王海林 陈剑 方亮 王磊
Format Journal Article
LanguageEnglish
Published 2016
Subjects
AZO薄膜
RF磁控溅射
光电学性能
显微组织
Online AccessGet full text
ISSN1003-6326

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Summary:采用高致密度靶材在室温条件下玻璃衬底上RF磁控溅射制备铝掺杂氧化锌（AZO）薄膜。用X射线衍射仪、冷场发射扫描电子显微镜、紫外可见光分光光度计、四探针测试仪和霍尔测试仪分析表征薄膜的显微组织、表面形貌和光电学性能。结果表明,所制备的薄膜均为多晶六方纤锌矿结构,溅射功率对AZO薄膜的光电学性能,尤其是电学性能有重要影响。不同溅射功率下薄膜可见光平均透过率均大于85%,当溅射功率为200 W时,获得最小电阻率4.5×10^-4Ω·cm和87.1%的透过率。AZO薄膜禁带宽度随溅射功率不同在3.48-3.68 e V范围内变化。
Bibliography:Al-doped ZnO thin films were prepared on glass substrate using an ultra-high density target by RF magnetron sputtering at room temperature. The microstructure, surface morphology, optical and electrical properties of AZO thin films were investigated by X-ray diffractometer, scanning electron microscope, UV-visible spectrophotometer, four-point probe method, and Hall-effect measurement system. The results showed that all the films obtained were polycrystalline with a hexagonal structure and average optical transmittance of AZO thin films was over 85 % at different sputtering powers. The sputtering power had a great effect on optoelectronic properties of the AZO thin films, especially on the resistivity. The lowest resistivity of 4.5×10^-4 Ω·cm combined with the transmittance of 87.1% was obtained at sputtering power of 200 W. The optical band gap varied between 3.48 and 3.68 eV.
43-1239/TG
Yi-hua SUN, Hai-lin WANG, Jian CHEN, Liang FANG, Lei WANG（ 1. College of Materials and Chemical Engineering, China Three Gorges University, Yichang 443002, China; 2. Guangxi Key Laboratory of New Energy and Building Energy Saving, Guilin University of Technology, Guilin 541004, China）
Abstract： Al-doped ZnO thin films were prepared on glass substrate using an ultra-high density target by RF magnetron sputtering at room temperature. The microstructure, surface morphology, optical and electrical properties of AZO thin films were investigated by X-ray diffractometer, scanning electron microscope, UV-visible spectrophotometer, four-point probe method, and Hall-effect measurement system. The results showed that all the films obtained were polycrystalline with a hexagonal structure and average optical transmittance of AZO thin films was over 85 % at different sputtering powers. The sputtering power had a great effect on optoelectronic properties of the AZO thin films, especially on the resistivity. The lowest resistivity of 4.5×10？4 Ω·cm combined with the transmittance of 87.1% was obtained at sputtering power of 200 W. The optical band gap varied between 3.48 and 3.68 eV. Key words： AZO thin film; microstructure; optoelectronic properties; RF magnetron sputtering
ISSN:1003-6326