Self-biased magnetoelectric effect in(Pb, Zr)TiO3/metglas laminates by annealing method
Fe BSi C metglas was annealed at an optimized condition(350 °C, 5 min) to achieve the mixed phases with pristine amorphous phase and crystallization phase.With such annealed metglas, a self-biased magnetoelectric(ME) laminate of metglas/Pb(Zr, Ti)O3/metglas was fabricated. Without any external magne...
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Published in | 中国科学通报:英文版 no. 5; pp. 378 - 382 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
2016
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Subjects | |
Online Access | Get full text |
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Summary: | Fe BSi C metglas was annealed at an optimized condition(350 °C, 5 min) to achieve the mixed phases with pristine amorphous phase and crystallization phase.With such annealed metglas, a self-biased magnetoelectric(ME) laminate of metglas/Pb(Zr, Ti)O3/metglas was fabricated. Without any external magnetic field, the composite exhibits the ME coefficient aE31 of 103 m V/(cm Oe) at1 k Hz and 15.5 V/(cm Oe) at electromechanical resonance frequency. The induced ME voltage shows a good linear relation to the applied AC magnetic field with amplitude as low as 10-7T at 1 k Hz. It is expected that such self-biased ME composites provide a practical application of economical and compact magnetic sensors. |
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Bibliography: | Magnetoelectric;Self-bias;Metglas;Annealing Fe BSi C metglas was annealed at an optimized condition(350 °C, 5 min) to achieve the mixed phases with pristine amorphous phase and crystallization phase.With such annealed metglas, a self-biased magnetoelectric(ME) laminate of metglas/Pb(Zr, Ti)O3/metglas was fabricated. Without any external magnetic field, the composite exhibits the ME coefficient aE31 of 103 m V/(cm Oe) at1 k Hz and 15.5 V/(cm Oe) at electromechanical resonance frequency. The induced ME voltage shows a good linear relation to the applied AC magnetic field with amplitude as low as 10-7T at 1 k Hz. It is expected that such self-biased ME composites provide a practical application of economical and compact magnetic sensors. 10-1298/N |
ISSN: | 1001-6538 1861-9541 |