Evaluation of a gate-first process for AIGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

In this paper, TiN/A1Ox gated A1GaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors （MOS- HFETs） were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 ℃ with the contact resistance app...

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Bibliographic Details
Published in中国物理B：英文版 no. 3; pp. 445 - 447
Main Author 李柳暗 张家琦 刘扬 敖金平
Format Journal Article
LanguageEnglish
Published 2016
Subjects
AlGaN/GaN异质结
MOS器件
场效电晶体
异质结场效应晶体管
欧姆接触
评价
退火温度
金属氧化物半导体
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Summary:In this paper, TiN/A1Ox gated A1GaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors （MOS- HFETs） were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 ℃ with the contact resistance approximately 1.6 Ω.mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/A1Ox gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AIGaN/GaN MOS-HFETs.
Bibliography:11-5639/O4
metal-oxide-semiconductor heterostructure field-effect transistors, low temperature ohmic pro-cess, inductively coupled plasma
In this paper, TiN/A1Ox gated A1GaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors （MOS- HFETs） were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 ℃ with the contact resistance approximately 1.6 Ω.mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/A1Ox gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AIGaN/GaN MOS-HFETs.
ISSN:1674-1056
2058-3834