Influence of ultra-thin TiN thickness（1.4 nm and 2.4 nm） on positive bias temperature instability（PBTI）of high-k/metal gate nMOSFETs with gate-last process

The positive bias temperature instability（PBTI） degradations of high-k/metal gate（HK/MG） n MOSFETs with thin TiN capping layers（1.4 nm and 2.4 nm） are systemically investigated. In this paper, the trap energy distribution in gate stack during PBTI stress is extracted by using ramped recovery stress,...

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Published in中国物理B：英文版 no. 12; pp. 499 - 502
Main Author 祁路伟 杨红 任尚清 徐烨峰 罗维春 徐昊 王艳蓉 唐波 王文武 闫江 朱慧珑 赵超 陈大鹏 叶甜春
Format Journal Article
LanguageEnglish
Published 2015
Subjects
不稳定性
偏压
工艺
栅极
温度
等效氧化层厚度
超薄
锡层厚度
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Summary:The positive bias temperature instability（PBTI） degradations of high-k/metal gate（HK/MG） n MOSFETs with thin TiN capping layers（1.4 nm and 2.4 nm） are systemically investigated. In this paper, the trap energy distribution in gate stack during PBTI stress is extracted by using ramped recovery stress, and the temperature dependences of PBTI（90℃,125℃, 160℃） are studied and activation energy（Ea） values（0.13 eV and 0.15 eV） are extracted. Although the equivalent oxide thickness（EOT） values of two TiN thickness values are almost similar（0.85 nm and 0.87 nm）, the 2.4-nm TiN one（thicker Ti N capping layer） shows better PBTI reliability（13.41% at 0.9 V, 90℃, 1000 s）. This is due to the better interfacial layer/high-k（IL/HK） interface, and HK bulk states exhibited through extracting activation energy and trap energy distribution in the high-k layer.
Bibliography:positive bias temperature instability（PBTI）,HK/MG,Ea,trap energy distribution
11-5639/O4
The positive bias temperature instability（PBTI） degradations of high-k/metal gate（HK/MG） n MOSFETs with thin TiN capping layers（1.4 nm and 2.4 nm） are systemically investigated. In this paper, the trap energy distribution in gate stack during PBTI stress is extracted by using ramped recovery stress, and the temperature dependences of PBTI（90℃,125℃, 160℃） are studied and activation energy（Ea） values（0.13 eV and 0.15 eV） are extracted. Although the equivalent oxide thickness（EOT） values of two TiN thickness values are almost similar（0.85 nm and 0.87 nm）, the 2.4-nm TiN one（thicker Ti N capping layer） shows better PBTI reliability（13.41% at 0.9 V, 90℃, 1000 s）. This is due to the better interfacial layer/high-k（IL/HK） interface, and HK bulk states exhibited through extracting activation energy and trap energy distribution in the high-k layer.
ISSN:1674-1056
2058-3834