Design and implementation of 83-nm low noise InP-based InAIAs/InGaAs PHEMTs

• Published in: 半导体学报：英文版 no. 8; pp. 83 - 87
• Main Author: 王志明 赵卓彬 胡志富 黄辉 崔玉兴 孙希国 默江辉 李亮 付兴昌 吕昕
• Format: Journal Article
• Language: English
• Published: 2015
• Subjects: GHz; InGaAs; InP基; PHEMT; 低噪声; 参数测量; 设计; 赝配高电子迁移率晶体管

83-nm T-shaped gate InP-based In0.52Al0.48As/In0.65Ga0.35As pseudomorphic high electron mobility transistors （PHEMTs） with excellent DC and RF performance as well as low noise characteristics are reported, including a maximum saturation current density/ass of 894 mA/mm, a maximum extrinsic transcond...