Design and implementation of 83-nm low noise InP-based InAIAs/InGaAs PHEMTs

83-nm T-shaped gate InP-based In0.52Al0.48As/In0.65Ga0.35As pseudomorphic high electron mobility transistors （PHEMTs） with excellent DC and RF performance as well as low noise characteristics are reported, including a maximum saturation current density/ass of 894 mA/mm, a maximum extrinsic transcond...

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Published in半导体学报：英文版 no. 8; pp. 83 - 87
Main Author 王志明 赵卓彬 胡志富 黄辉 崔玉兴 孙希国 默江辉 李亮 付兴昌 吕昕
Format Journal Article
LanguageEnglish
Published 2015
Subjects
GHz
InGaAs
InP基
PHEMT
低噪声
参数测量
设计
赝配高电子迁移率晶体管
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Summary:83-nm T-shaped gate InP-based In0.52Al0.48As/In0.65Ga0.35As pseudomorphic high electron mobility transistors （PHEMTs） with excellent DC and RF performance as well as low noise characteristics are reported, including a maximum saturation current density/ass of 894 mA/mm, a maximum extrinsic transconductance gm, max of 1640 mS/mm, an extrapolated cutoff frequency ft of 247 GHz and a maximum oscillation frequency fmax of 392 GHz which were based on the measured S-parameters from 1 to 110 GHz. The minimum noise figure （NFmin） measured by the cold-source method is 1 dB at 30 GHz associated with a gain of 14.5 dB at Vds of 0.8 V and Ids of 17 mA. These results were obtained by the combination of increased InAs mole fraction in the channel, gate size scaling, parasitic reduction and the quantization channel. These excellent results make it one of the most suitable devices for millimeter wave （MMW） low noise applications.
Bibliography:InP; PHEMT; millimeter wave; low noise; on-wafer measurement
Wang Zhiming, Zhao Zhuobin Hu Zhifu, Huang Hui, Cui Yuxing Sun Xiguo, Mo Jianghui, Li Liang, Fu Xingchang and Lu Xin（1Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, Beijing Institute of Technology, Beijing 100081, China 2Hebei Semiconductor Research Institute, Shijiazhuang 050051, China 3National Institute of Metrology, Beijing 100029, China）
83-nm T-shaped gate InP-based In0.52Al0.48As/In0.65Ga0.35As pseudomorphic high electron mobility transistors （PHEMTs） with excellent DC and RF performance as well as low noise characteristics are reported, including a maximum saturation current density/ass of 894 mA/mm, a maximum extrinsic transconductance gm, max of 1640 mS/mm, an extrapolated cutoff frequency ft of 247 GHz and a maximum oscillation frequency fmax of 392 GHz which were based on the measured S-parameters from 1 to 110 GHz. The minimum noise figure （NFmin） measured by the cold-source method is 1 dB at 30 GHz associated with a gain of 14.5 dB at Vds of 0.8 V and Ids of 17 mA. These results were obtained by the combination of increased InAs mole fraction in the channel, gate size scaling, parasitic reduction and the quantization channel. These excellent results make it one of the most suitable devices for millimeter wave （MMW） low noise applications.
11-5781/TN
ISSN:1674-4926