High power laser diodes of 2μm AIGaAsSb/InGaSb type I quantum-wells

2μm A1GaAsSb/InGaSb type-I quantum-well high-power laser diodes （LDs） are grown using molec- ular beam epitaxy. Stripe-type waveguide single LD （single emitter） and array LD （four emitters） devices without facet coatings are fabricated. For the single LDs （single emitter） device, the maximum output...

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Published in半导体学报：英文版 no. 5; pp. 50 - 53
Main Author 廖永平 张宇 邢军亮 魏思航 郝宏玥 王国伟 徐应强 牛智川
Format Journal Article
LanguageEnglish
Published 2015
Subjects
外延生长
最大输出功率
涂层设备
激光二极管
脉冲模式
量子阱
阈值电流密度
高功率
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Summary:2μm A1GaAsSb/InGaSb type-I quantum-well high-power laser diodes （LDs） are grown using molec- ular beam epitaxy. Stripe-type waveguide single LD （single emitter） and array LD （four emitters） devices without facet coatings are fabricated. For the single LDs （single emitter） device, the maximum output power under contin- uous wave （CW） operation is 0.5 W at 10℃ with a threshold current density of 150 A/cm^2 and a slope efficiency of 0.17 W/A, the output powers under the pulse mode in the 5% duty cycles are much higher, up to 0.98 W. For the array LD devices, the maximum output powers are 1.02 W under the CW mode and 3.03 W under the pulse mode at room temperature.
Bibliography:laser diodes; arrays; emitters; quantum wells
Liao Yongping, Zhang Yu, Xing Junliang, Wei Sihang, Hao Hongyue, Wang Guowei, Xu Yingqiang and Niu Zhichuan 1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 2 Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
2μm A1GaAsSb/InGaSb type-I quantum-well high-power laser diodes （LDs） are grown using molec- ular beam epitaxy. Stripe-type waveguide single LD （single emitter） and array LD （four emitters） devices without facet coatings are fabricated. For the single LDs （single emitter） device, the maximum output power under contin- uous wave （CW） operation is 0.5 W at 10℃ with a threshold current density of 150 A/cm^2 and a slope efficiency of 0.17 W/A, the output powers under the pulse mode in the 5% duty cycles are much higher, up to 0.98 W. For the array LD devices, the maximum output powers are 1.02 W under the CW mode and 3.03 W under the pulse mode at room temperature.
11-5781/TN
ISSN:1674-4926