Transient simulation and analysis of current collapse due to trapping effects in AIGaN/GaN high-electron-mobility transistor

In this paper, two-dimensional （2D） transient simulations of an A1GaN/GaN high-electron-mobility transistor （HEMT） are carded out and analyzed to investigate the current collapse due to trapping effects. The coupling effect of the trapping and thermal effects are taken into account in our simulation...

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Bibliographic Details
Published in中国物理B：英文版 no. 4; pp. 530 - 534
Main Author 周幸叶 冯志红 王元刚 顾国栋 宋旭波 蔡树军
Format Journal Article
LanguageEnglish
Published 2015
Subjects
AlGaN
HEMT
效果分析
电流崩塌
瞬态仿真
脉冲电流
诱捕效果
高电子迁移率晶体管
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ISSN1674-1056
2058-3834

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Summary:In this paper, two-dimensional （2D） transient simulations of an A1GaN/GaN high-electron-mobility transistor （HEMT） are carded out and analyzed to investigate the current collapse due to trapping effects. The coupling effect of the trapping and thermal effects are taken into account in our simulation. The turn-on pulse gate-lag transient responses with different quiescent biases are obtained, and the pulsed current-voltage （l-V） curves are extracted from the transients. The experimental results of both gate-lag transient current and pulsed I-V curves are reproduced by the simulation, and the current collapse due to the trapping effect is explained from the view of physics based on the simulation results. In addition, the results show that bulk acceptor traps can influence the gate-lag transient characteristics of A1GaN/GaN HEMTs besides surface traps and that the thermal effect can accelerate the emission of captured electrons for traps. Pulse transient simulation is meaningful in analyzing the mechanism of dynamic current collapse, and the work in this paper will benefit the reliability study and model development of GaN-based devices.
Bibliography:11-5639/O4
transient simulation, A1GaN/GaN HEMT, current collapse, trapping effect
In this paper, two-dimensional （2D） transient simulations of an A1GaN/GaN high-electron-mobility transistor （HEMT） are carded out and analyzed to investigate the current collapse due to trapping effects. The coupling effect of the trapping and thermal effects are taken into account in our simulation. The turn-on pulse gate-lag transient responses with different quiescent biases are obtained, and the pulsed current-voltage （l-V） curves are extracted from the transients. The experimental results of both gate-lag transient current and pulsed I-V curves are reproduced by the simulation, and the current collapse due to the trapping effect is explained from the view of physics based on the simulation results. In addition, the results show that bulk acceptor traps can influence the gate-lag transient characteristics of A1GaN/GaN HEMTs besides surface traps and that the thermal effect can accelerate the emission of captured electrons for traps. Pulse transient simulation is meaningful in analyzing the mechanism of dynamic current collapse, and the work in this paper will benefit the reliability study and model development of GaN-based devices.
ISSN:1674-1056
2058-3834