Evolution of insoluble eutectic Si particles in anodic oxidation films during adipic-sulfuric acid anodizing processes of ZLll4A aluminum alloys

The effects of insoluble eutectic Si particles on the growth of anodic oxide films on ZL114A aluminum alloy substrates were in- vestigated by optical microscopy （OM） and scanning electron microscopy （SEM）. The anodic oxidation was performed at 25℃ and a con- stant voltage of 15 V in a solution conta...

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Published in矿物冶金与材料学报：英文版 Vol. 22; no. 3; pp. 302 - 308
Main Author Lei Hua Jian-hua Liu Song-mei Li Mei Yu Lei Wang Yong-xin Cui
Format Journal Article
LanguageEnglish
Published 2015
Subjects
不溶性
共晶Si
己二酸
硫酸
粒子
铝合金
阳极氧化工艺
阳极氧化膜
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Summary:The effects of insoluble eutectic Si particles on the growth of anodic oxide films on ZL114A aluminum alloy substrates were in- vestigated by optical microscopy （OM） and scanning electron microscopy （SEM）. The anodic oxidation was performed at 25℃ and a con- stant voltage of 15 V in a solution containing 50 g/L sulfuric acid and 10 g/L adipic acid. The thickness of the formed anodic oxidation film was approximately 7.13 μm. The interpore distance and the diameters of the major pores in the porous layer of the film were within the ap- proximate ranges of 10~20 nm and 5-10 nm, respectively. Insoluble eutectic Si particles strongly influenced the morphology of the anodic oxidation films. The anodic oxidation films exhibited minimal defects and a uniform thickness on the ZL114A substrates; in contrast, when the front of the oxide oxidation films encountered eutectic Si particles, defects such as pits and non-uniform thickness were observed, and pits were observed in the films.
Bibliography:aluminum alloys; anodizing; anodic oxidation; thin films; eutectic; silicon; particles
The effects of insoluble eutectic Si particles on the growth of anodic oxide films on ZL114A aluminum alloy substrates were in- vestigated by optical microscopy （OM） and scanning electron microscopy （SEM）. The anodic oxidation was performed at 25℃ and a con- stant voltage of 15 V in a solution containing 50 g/L sulfuric acid and 10 g/L adipic acid. The thickness of the formed anodic oxidation film was approximately 7.13 μm. The interpore distance and the diameters of the major pores in the porous layer of the film were within the ap- proximate ranges of 10~20 nm and 5-10 nm, respectively. Insoluble eutectic Si particles strongly influenced the morphology of the anodic oxidation films. The anodic oxidation films exhibited minimal defects and a uniform thickness on the ZL114A substrates; in contrast, when the front of the oxide oxidation films encountered eutectic Si particles, defects such as pits and non-uniform thickness were observed, and pits were observed in the films.
11-5787/T
ISSN:1674-4799
1869-103X